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HS-26C32RH
August 1995
Radiation Hardened Quad Differential Line Receiver
Pinouts
HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW
AIN 1 AIN 2 AOUT 3 ENABLE 4 COUT 5 CIN 6 CIN 7 16 VDD 15 BIN 14 BIN 13 BOUT 12 ENABLE 11 DOUT 10 DIN 9 DIN
Features
* 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD (Si) * Latchup Free * EIA RS-422 Compatible Outputs * CMOS Compatible Inputs * Input Fail Safe Circuitry * High Impedance Inputs when Disabled or Powered Down * Low Power Dissipation 138mW Standby (Max) * Single 5V Supply * Full -55
oC
to
+125oC
Military Temperature Range
GND 8
Description
The Intersil HS-26C32RH is a differential line receiver designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened CMOS processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. The HS-26C32RH has an input sensitivity typically of 200mV over the common mode input voltage range of 7V. The receivers are also equipped with input fail safe circuitry, which causes the outputs to go to a logic "1" when the inputs are open. Enable and Disable functions are common to all four
AIN AIN AOUT ENABLE COUT CIN CIN GND
HS9-26C32RH 16 LEAD FLATPACK MIL-STD-1835: CDFP4-F16 TOP VIEW
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VDD BIN BIN BOUT ENABLE DOUT DIN DIN
Logic Diagram
ENABLE ENABLE DIN DIN CIN CIN BIN BIN AIN AIN
TRUTH TABLE DEVICE POWER ON/OFF ENABLE ON 0 ON 1 ON 1 ON X ON X ON 1 ON X INPUTS ENABLE 1 X X 0 0 X 0 INPUT X VID VTH (Max) VID VTH (Min) VID VTH (Max) VID VTH (Min) Open Open OUTPUT OUT HI-Z 1 0 1 0 1 1
+
-
+
-
+
-
+
-
DOUT
COUT
BOUT
AOUT
Ordering Information
PART NUMBER HS1-26C32RH-8 HS1-26C32RH-Q HS9-26C32RH-8 HS9-26C32RH-Q HS1-26C32RH/Sample HS1-26C32RH/Proto HS9-26C32RH/Sample HS9-26C32RH/Proto TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC +25oC -55oC to +125oC +25oC -55oC to +125oC SCREENING LEVEL Intersil Class B Equivalent Intersil Class S Equivalent Intersil Class B Equivalent Intersil Class S Equivalent Sample Prototype Sample Prototype PACKAGE 16 Lead Sideboard DIP 16 Lead Sideboard DIP 16 Lead Flatpack 16 Lead Flatpack 16 Lead Sideboard DIP 16 Lead Sideboard DIP 16 Lead Flatpack DB NA 16 Lead Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 407-727-9207 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
774
518790 3402.2
Specifications HS-26C32RH
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Common Mode Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Enable Pins Input Voltage . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V DC Drain Current (Any One Output) . . . . . . . . . . . . . . . . . . . . . .25mA DC Diode Input Current Enable Pin . . . . . . . . . . . . . . . . . . . . . . . 1A Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 80oC/W 20oC/W Ceramic Flatpack Package . . . . . . . . . . . 103oC/W 26oC/W Maximum Package Power Dissipation at +125oC SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . . . . 0.3W Note: Maximum device Power Dissipation is defined as VDD x ICC and must withstand the added PD due to output current test; IO at +125oC Derating Requirements: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . No Derating Required Ceramic Flatpack Package . . . . . . . . . . . . . No Derating Required
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Common Mode Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . 0V to 0.3VDD Max Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VDD to 0.7VDD Min Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . 500ns Max
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 2) LIMITS TEMPERATURE -55oC, +25oC, +125oC 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -400 0.7 VDD -5.0 20 4 0.4 +400 0.3 VDD 1.8 -2.7 1.0 5.0 25 -1.5 1.5 100 20 mV k V mV V V mA mA A A mA V MIN 4.1 MAX UNITS V
PARAMETER High Level Output Voltage Low Level Output Voltage Differential Input Voltage Enabled High Level Input Voltage Enabled Low Level Input Voltage Input Current High (Differential Inputs) Input Current Low (Differential Inputs) Input Leakage Enable Pins Three-State Output Leakage Current Standby Supply Current Enable Clamp Voltage
SYMBOL VOH VOL VTH VIH VIL IINH IINL IIN IOZ IDDSB VIC
(NOTE 1) CONDITIONS VDD = 4.5V, VDIFF = 1.0V, IO = -6mA (Notes 2, 5) VDD = 4.5V, VDIFF = -1.0V, IO = 6mA (Note 5) VDD = VIH = 4.5V, -7.0V < VCM < 7.0V VDD = 4.5V, 5.5V (Note 4) VDD = 4.5V, 5.5V (Note 4) VDD = 5.5, +V = 10V, -V = 0V and +V = 0V, -V = 10V VDD = 5.5, +V = -10V, -V = 0V and +V = 0V, -V = -10V VDD = 5.5V, VIN = 0V, 5.5V VDD = 5.5V, VO = VDD or GND VDD = 5.5V, VDIFF = 1.0V Outputs = Open At -1mA At 1mA
GROUP A SUBGROUPS 1, 2, 3
Input Hysteresis Input Resistance NOTES:
VHYST RIN -7V VCM 7V
1 1
1. All voltages referenced to device ground. 2. Force/Measure functions may be interchanged. 3. These test condition are detailed in EIA specification RS-422. 4. This parameter tested as inputs for the VOL, VOH, IOZ tests. 5. VIL = 0.3VDD, VIH = 0.7VDD.
Spec Number 775
518790
Specifications HS-26C32RH
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTES 1, 2) CONDITIONS VDD = 4.5V, VDIFF = 2.5V VDD = 4.5V, VDIFF = 2.5V VDD = 4.5V, VDIFF = 2.5V VDD = 4.5V, VDIFF = 2.5V GROUP A SUBGROUPS 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 LIMITS TEMPERATURE -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC -55oC, +25oC, +125oC MIN 6 3 6 2 MAX 40 18 29 12 UNITS ns ns ns ns
PARAMETER Propagation Delay Time Propagation Delay Time Propagation Delay Time Propagation Delay Time TRISE/TFALL NOTES:
SYMBOL TPLH, TPHL TPZH, TPZL TPLZ, TPHZ TTHL, TTLH
1. All voltages referenced to device ground. 2. See Table EIA RS-422 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1) CONDITIONS VDD = Open, f = 1MHz VDD = Open, f = 1MHz + and - Inputs are Open, VOUT = Logic "1" LIMITS NOTES 1 1 1 TEMPERATURE -55oC, +25oC, +125oC Output Capacitance Fail Safe NOTE: 1. The parameters listed on Table 3 are controlled via design or process parameters. Min and Max limits are guaranteed but not directly tested. These parameters are characterized at initial design release and upon design changes which would affect these characteristics. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS The post irradiation electrical performance characteristics are the same as the parameters listed in Tables 1, 2 and 3. COUT FSAFE -55oC, +25oC, +125oC -55oC, +25oC, +125oC 4.1 12 pF V MIN MAX 12 UNITS pF
PARAMETER Input Capacitance
SYMBOL CIN
TABLE 5. BURN-IN DELTA PARAMETERS (+25oC) AND GROUP B, SUBGROUP 5 DELTA PARAMETERS PARAMETER Standby Supply Current Three-State Output Leakage Current Low Level Output Voltage High Level Output Voltage Input Leakage Current SYMBOL IDDSB IOZ VOL VOH IIN DELTA LIMITS 4mA 1.0A 60mV 150mV 150nA
TABLE 6. APPLICABLE SUBGROUPS GROUP A SUBGROUPS CONFORMANCE GROUP Initial Test Interim Test PDA 1 & 2 Final Test MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 TESTED FOR -Q 1, 7, 9 1, 7, 9, 1, 7, 2, 3, 8A, 8B, 10, 11 RECORDED FOR -Q 1 (Note 2) 1, (Note 2) TESTED FOR -8 1, 7, 9 1, 7, 9 1, 7 2, 3, 8A, 8B, 10, 11 RECORDED FOR -8
Spec Number 776
518790
Specifications HS-26C32RH
TABLE 6. APPLICABLE SUBGROUPS (Continued) GROUP A SUBGROUPS CONFORMANCE GROUP Group A (Note 1) Subgroup B5 Subgroup B6 Group C Group D Group E, Subgroup 2 NOTES: 1. Alternate Group A testing in accordance with MIL-STD-883 method 5005 may be exercised. 2. Table 5 parameters only MIL-STD-883 METHOD Sample 5005 Sample 5005 Sample 5005 Sample 5005 Sample 5005 Sample 5005 TESTED FOR -Q 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 7, 9 N/A 1, 7, 9 1, 7, 9 RECORDED FOR -Q 1, 2, 3 (Note 2) N/A TESTED FOR -8 1, 2, 3, 7, 8A, 8B, 9, 10, 11 N/A N/A 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 7, 9 1, 7, 9 RECORDED FOR -8
TABLE 7. TOTAL DOSE IRRADIATION TEST CONFOMRANCE GROUPS Group E Subgroup 2 METHOD 5005 PRE-RAD 1, 7, 9 POST-RAD Table 4 READ AND RECORD PRE-RAD 1, 7, 9 POST-RAD Table 4
TABLE 8. BURN-IN TEST CONNECTIONS (VDD = 6V, 0.5V) POWER SUPPLY A VDD 1, 7, 9, 15, 16 2, 4, 6, 10, 12, 14, 16 4, 16 4, 16 POWER SUPPLY B 1/2 VDD 1, 3, 5, 7, 9, 11, 13, 15 (Note 2) 1, 7, 9, 15 POWER SUPPLY C 1/2 VDD 3, 5, 11, 13
TEST Static Burn-In I Static Burn-In II Dynamic Burn-In Option 1 Dynamic Burn-In Option 2 NOTES:
OPEN 3, 5, 11, 13 3, 5, 11, 13 -
GROUND 2, 4, 6, 8, 10, 12, 14 1, 7, 8, 9, 15 8, 12 12, 8
50KHz 2, 6, 10, 14 2, 6, 10, 14
1. Each pin except for VDD and GND will have a series resistor. (For static BI, R = 10k 5%, for dynamic BI, R = 680 5%) 2. When connecting the - inputs and their associated outputs to the same supply, a power supply bypass capacitor of 22F must be used.
TABLE 9. IRRADIATION TEST CONNECTIONS (TA = +25oC, 5oC, VDD = 5V, 10%) TEST Radiation Exposure NOTES: 1. Each pin except for VDD and GND will have a series resistor. (R = 47k 5%). 2. When connecting the - inputs and their associated outputs to the same supply, a power supply bypass capacitor of 22F must be used. OPEN 3, 5, 11, 13 GROUND 2, 4, 6, 8, 10, 12, 14 VDD 1, 7, 9, 15, 16 1/2 VDD 50kHz 25kHz -
Spec Number 777
518790
HS-26C32RH Intersil Space Level Product Flow -Q
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Die Attach (Note 1) 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A CSI and/or GSI Pre-Cap (Note 7) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 Hours Min, +125oC Min, Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Method 1015, Condition A or B, 24 Hours Minimum, +125oC Minimum 100% Interim Electrical Test 1 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Note 2) 100% Dynamic Burn-In, Condition D, 240 Hours, +125oC or Equivalent, Method 1015 100% Interim Electrical Test 2(T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test (T4) 100% Fine/Gross Leak, Method 1014 100% Radiographic (X-Ray), Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) Sample - Group B, Method 5005 (Note 5) Sample - Group D, Method 5005 (Notes 5 and 6) 100% Data Package Generation (Note 8) CSI and/or GSI Final (Note 7)
NOTES: 1. Silver glass die attach shall be permitted. 2. Failures from subgroup 1, 7 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. Per method 5004, 1 view only is supplied on flat packages and leadless chip carriers, 2 views are supplied in all other cases. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Group B and D inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include separate line items for Group B Test, Group B Samples, Group D Test and Group D Samples. 6. Group D Generic Data, as defined by MIL-I-38535, is optional and will not be supplied unless required by the P.O. When required, the P.O. should include a separate line item for Group D Generic Data. Group D Generic Data. Generic data is not guaranteed to be available and is therefore not available in all cases. 7. CSI and/or GSI inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include separate line items for CSI PreCap inspection, CSI Final Inspection, GSI PreCap inspection, and/or GSI Final Inspection. 8. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * Group B and D attributes and/or Generic data is included when required by the P.O. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
Spec Number 778
518790
HS-26C32RH Intersil Space Level Product Flow -8
GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Die Attach (Note 1) Periodic- Wire Bond Pull Monitor, Method 2011 Periodic- Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition B CSI and/or GSI Pre-Cap (Note 6) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% External Visual 100% Initial Electrical Test
NOTES: 1. Silver glass die attach shall be permitted. 2. Failures from subgroup 1, 7 are used for calculating PDA. The maximum allowable PDA = 5%. 3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 4. Group B, C and D inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include separate line items for Group B Test, Group C Test, Group C Samples, Group D Test and Group D Samples. 5. Group C and/or Group D Generic Data, as defined by MIL-I-38535, is optional and will not be supplied unless required by the P.O. When required, the P.O. should include a separate line item for Group C Generic Data and/or Group D Generic Data. Generic data is not guaranteed to be available and is therefore not available in all cases. 6. CSI and/or GSI inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include separate line items for CSI PreCap inspection, CSI Final Inspection, GSI PreCap inspection, and/or GSI Final Inspection. 7. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Group B, C and D attributes and/or Generic data is included when required by the P.O. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
100% Dynamic Burn-In, Condition D, 160 Hours, +125oC or Equivalent, Method 1015 100% Interim Electrical Test 100% PDA, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 3) Sample - Group B, Method 5005 (Note 4) Sample - Group C, Method 5005 (Notes 4 and 5) Sample - Group D, Method 5005 (Notes 4 and 5) 100% Data Package Generation (Note 7) CSI and/or GSI Final (Note 6)
Spec Number 779
518790
HS-26C32RH Propagation Delay Timing Diagram
-VIN INPUT +VIN = 0V TPLH VOH VS = 50% VOL OUTPUT TPHL CL = 50pF RL = 1000 0V -2.5V +2.5V CL RL
Propagation Delay Load Circuit
DUT TEST POINT
Three-State Low Timing Diagrams
VIH VS VSS TPZL TPLZ VOZ VT VOL OUTPUT VW INPUT
Three-State High Timing Diagrams
VIH VS VSS TPZH TPHZ VOH VT VOZ OUTPUT VW INPUT
THREE-STATE LOW VOLTAGE LEVELS PARAMETER VDD VIH VS VT VW GND HS-26C32RH 4.50 4.50 2.25 50 VOL + 0.5 0 UNITS V V V % V V
THREE-STATE HIGH VOLTAGE LEVELS PARAMETER VDD VIH VS VT VW GND HS-26C32RH 4.50 4.50 2.25 50 VOH - 0.5 0 UNITS V V V % V V
Three-State Low Load Circuit
VDD
Three-State High Load Circuit
DUT TEST POINT CL RL
RL TEST POINT CL CL = 50pF CL = 50pF RL = 1000W RL = 1000
DUT
Spec Number 780
518790
HS-26C32RH Metallization Topology
DIE DIMENSIONS: 84mils x 130 mils (2140m x 3290m) METALLIZATION: M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 5800A GLASSIVATION: Type: SiO2 Thickness: 10kA 1kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 110m x 100m
Metallization Mask Layout
HS-26C32RH
AIN (1) VDD (16) BIN (15)
AIN (2)
(14) BIN
AOUT (3)
(13) BOUT
ENAB (4)
(12) ENAB
COUT (5)
(11) DOUT
CIN (6)
(10) DIN
(7) CIN
(8) GND
(9) DIN
Spec Number 781
518790
HS-26C32RH
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 727-9207 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
Spec Number 782

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